Integrated circuit device including a layered superlattice material with an interface buffer layer

ABSTRACT

An integrated circuit memory device includes a thin film layered superlattice material layer and an electrode. An interface buffer layer is formed between said thin film layered superlattice material layer and said electrode. The interface buffer layer is selected from the group consisting of: 1) simple oxides, not including bismuth, of an A-site or a B-site metal; and 2) second layered superlattice materials different from the first layered superlattice material and containing at least one A-site or B-site metal that is the same as an A-site or B-site metal in the first layered superlattice material. The oxide not including bismuth can be a complex oxide including a plurality of metals or a simple oxide including only one metal. Most preferably, the interface buffer layer is selected from the group consisting of strontium tantalate, bismuth tantalate, strontium niobium tantalate, strontium bismuth tantalate niobate, titanium oxide, and tantalum pentoxide, other simple oxides of A-site and B-site metals, and other simple oxides of one or more A-site or B-site metals.

RELATED APPLICATIONS

This application is a divisional application of application Ser. No.09/898,927 filed Jul. 3, 2001, now U.S. Pat. No. 6,489,645.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention pertains to the field of thin films for use inintegrated circuits, and particularly thin film layered superlatticematerials. More specifically, a specialized interface buffer layerenhances the performance of thin film layered superlattice materials.

2. Statement of the Problem

Ferroelectric materials are characterized by their ability to retain aninduced polarization state even in the absence of an applied electricfield. If the polarization state in one direction is identified as alogic “0” polarization state and the polarization state in the oppositedirection is identified as a logic “1” polarization state, andappropriate circuitry is provided to sense the polarization state, aferroelectric material can be used as the information storage medium ofa high speed nonvolatile computer memory. It is known that suchferroelectric memory device can be made by substituting a ferroelectricmaterial for the dielectric capacitor material of a conventional DRAMcapacitor circuit and making appropriate changes in the read and writecircuits and manufacturing processes to utilize the ferroelectric filmas the information storage medium. See, for example, U.S. Pat. No.5,784,310 issued Jul. 21, 1998 to Cuchiaro et al. This substitutionconverts the DRAM cell to a nonvolatile memory cell due to long-termretention of an induced polarization state in the ferroelectric materialeven in the absence of an applied field. It is also possible to make aferroelectric memory cell consisting of a single field effect transistordue to the nonvolatile polarization state of ferroelectric thin films,as described in U.S. Pat. No. 5,780,886 issued to Yamanobe et al.

A problem arising in the use of ferroelectric memory devices is thatpoint charge defects at the thin film layered superlattice materiallayer surfaces have the effect of screening the applied field due to thepresence of induced charge at the thin film surface creating a fieldopposite to the applied field. Thus, some of the interior ferroelectricdomains of the crystal are never exposed to a field having sufficientmagnitude to completely polarize the domains. The polarizationperformance of the ferroelectric memory devices suffer as a result ofthis field screening.

The most serious problems associated with screening, i.e., ferroelectricfatigue, leakage, and imprint problems, can be largely overcome throughthe use of layered thin film superlattice materials, as reported in U.S.Pat. No. 5,784,310 issued Jul. 21, 1998 to Cuchiaro et al. Ferroelectricperovskite-like layered thin film superlattice materials are a knownclass of self-ordering crystals, and have been used in thin filmssuitable for use in integrated circuits, e.g., as reported in U.S. Pat.No. 5,519,234 issued May 21, 1996 to Araujo et al. The term“perovskite-like” usually refers to a number of interconnected oxygenoctahedra. A primary cell is typically formed of an oxygen octahedralpositioned within a cube that is defined by large A-site metals wherethe oxygen atoms occupy the planar face centers of the cube and a smallB-site element occupies the center of the cube. In some instances, theoxygen octahedra may be preserved in the absence of A-site elements.

The thin film layered superlattice materials layers are characterized byan ability to find thermodynamic stability in layered structures.Disordered solutions of superlattice-forming metals, when exposed tothermal treatments, spontaneously form a single layered superlatticematerial compound having intercollated layers of perovskite-likeoctahedrons and a superlattice generator such as bismuth oxide. Theresultant self-ordered structure forms a superlattice by virtue of adual periodicity corresponding to the repeated layers. The layered thinfilm superlattice materials have this self-ordering ability and,consequently, are distinct from semiconductor heterolattices whichrequire the deposition of each layer in a separate deposition step.

The thin film layered superlattice materials, while much superior thanprior art materials, still present problems relating to integration intoconventional integrated circuit processes. For example, crystallizationof the best of the layered superlattice materials require hightemperatures that can damage conventional integrated circuit componentssuch as wiring layers and semiconductors. In addition, diffusion ofchemical elements between these materials and conventional integratedcircuit materials degrades both the layered materials and theconventional materials. Further, the interfaces between the layeredsuperlattice materials and conventional integrated circuit materials areoften problematic: evaporation of highly volatile elements of thelayered superlattice material, such as bismuth, can create deficiency ofthe volatile element in the layered superlattice material, leading todefects. Screening, surface roughness, and adhesion problems can alsooccur at these interfaces. Because of such problems, currentferroelectric memories are usually made with the ferroelectric materialisolated from the conventional materials by a thick layer of aninsulator. This, of course, increases the bulk of the memory anddecreases the density of the memory.

Bismuth oxide and Sr₃Bi₂O₆ buffer layers between the layeredsuperlattice materials and the conventional integrated circuitcomponents have been proposed as a solution to the bismuth deficiencyproblem. See H. Yamawaki, S. Miyagaki, T. Eshita and Y. Arimoto, “UltraThin SrBi₂Ta₂O₉ Ferroelectric Films Grown By Liquid Source CVD UsingBiOx Buffer Layers, in Extended Abstracts of the 1998 Inter. Conf. onSolid State Devices and Materials, 1998, pp.102-103 and U.S. Pat. No.6,194,227 B1 issued Feb. 27, 2001 to Takashi Hase. While analysis of thematerial has shown that such buffer layers solve the bismuth deficiencyproblem, the other problems mentioned above remained, and the electricalproperties of the layered superlattice materials made with such bufferlayers were not significantly improved.

It is also known that the polarizability of layered thin filmsuperlattice materials is reduced if stoichiometric precursors are used,since some elements, such as bismuth, are more volatile and aredisproportionately removed from the materials during drying andannealing. Therefore, precursors using excess amounts of these volatileelements are often used so that, after drying and annealing, theresulting material is approximately stoichiometric. Bismuth gradientshave also been used to obtain essentially stoichiometric final layeredsuperlattice materials. See, for example, U.S. Pat. No. 5,439,845 issuedAug. 8, 1995 to Watanabe et al. While the devices using a gradient showenhanced polarizability, they also must be relatively thick because ofthe multiple layers, resulting in lower density of the thin filmsuperlattice material memory.

There remains a need to obtain greater residual polarization values andimprove the interface between the thin film superlattice material layersand the conventional materials. The solution of these problems willresult in increasing the density of thin film superlattice materialmemories and other integrated circuits that contain thin filmsuperlattice materials as well as more reliable memories.

Solution

The present invention advances the art and overcomes the aforementionedproblems by providing improved thin film ferroelectric devices having anenhanced magnitude of residual polarization. These improvements derivefrom the use of an interface buffer layer between the electrode and thethin film superlattice material layer. An integrated circuit memorydevice according to the invention includes a substrate supporting a thinfilm superlattice material layer. The thin film superlattice materiallayer is “interfaced” on one or both the top and bottom side by aninterface buffer layer. Preferably, the interface buffer layer is anon-ferroelectric material. An interface buffer layer is preferablyplaced directly on top of the bottom electrode or directly below the topelectrode, or both. The interface buffer layer is preferably at least 3nanometers (nm) thick, and preferably resides in direct contact withboth the electrode and the first thin film superlattice material layer.Preferably, the interface buffer layer is selected from the groupconsisting of: 1) simple oxides, not including bismuth, of an A-site ora B-site metal; and 2) second layered superlattice materials differentfrom the first layered superlattice material and containing at least oneA-site or B-site metal that is the same as an A-site or B-site metal inthe first layered superlattice material. Here, a “simple oxide” is anoxide that does not have a layered structure, but rather has acrystalline structure consisting of a single repeated unit cell. Thesimple oxide not including bismuth can be one including a plurality ofmetals or one including only one metal. Most preferably, the interfacebuffer layer is selected from the group consisting of strontiumtantalate, bismuth tantalate, strontium niobium tantalate, strontiumbismuth tantalate niobate, titanium oxide, and tantalum pentoxide, othersimple oxides of A-site and B-site metals, and other simple oxides ofone or more A-site or B-site metals. “Different” within the abovecontext means that either the chemical elements or the stoichiometrywith respect to the A-site and B-site elements is different in thesecond layered superlattice material as compared to the first layeredsuperlattice material. “Different” does not include the situation inwhich the amount of bismuth or other layered superlattice generatormaterial is the only difference.

The interface buffer layer preferably ranges from 3 nm to 30 nm inthickness, with the most preferred thicknesses ranging from 5 nm to 20nm to provide adequate defect compensation while being thin enough toavoid significant problems with parasitic capacitance.

The invention provides an integrated circuit device including asubstrate supporting a first thin film layered superlattice materiallayer and an electrode, comprising an interface buffer layer interposedbetween the thin film layered superlattice material layer and theelectrode, the interface buffer layer selected from the group consistingof: simple oxides, not including bismuth, of an A-site or a B-sitemetal; and second layered superlattice materials different from thefirst layered superlattice material and containing at least one A-siteor B-site metal that is the same as an A-site or B-site metal in thefirst layered superlattice material. Preferably, the interface bufferlayer is selected from the group consisting of: strontium tantalate,bismuth tantalate, strontium niobium tantalate, strontium bismuthtantalate niobate, titanium oxide, and tantalum pentoxide, other simpleoxides of A-site and B-site metals, and other simple oxides of one ormore A-site or B-site metals. Preferably, the interface buffer layercomprises strontium tantalate, bismuth tantalate, strontium niobiumtantalate, titanium oxide, or tantalum pentoxide and the layeredsuperlattice material comprises strontium bismuth tantalate, strontiumbismuth niobium tantalate, bismuth titanate, or bismuth lanthanumtitanate. Preferably, the first layered superlattice material comprisesstrontium bismuth tantalum niobate or strontium bismuth tantalate, andthe second layered superlattice material comprises strontium bismuthtantalum niobate in which the amount of niobium exceeds the amount ofniobium in the first layered superlattice material.

The invention also provides a method of making an integrated circuitmemory device, the method comprising the steps of: depositing a firstelectrode layer on a substrate; depositing a first interface bufferlayer on the substrate, the first interface buffer layer selected fromthe group consisting of: simple oxides, not including bismuth, of anA-site or a B-site metal; and layered superlattice materials; anddepositing a thin film layered superlattice material layer adjacent tothe thin film interface buffer layer, the thin film layered superlatticematerial layer being a different material than the first interfacebuffer layer material and containing at least one A-site or B-site metalthat is the same as an A-site or B-site metal in the first interfacebuffer layer material. Preferably, the first interface buffer layer isselected from the group consisting of: strontium tantalate, bismuthtantalate, strontium niobium tantalate, strontium bismuth tantalateniobate, titanium oxide, and tantalum pentoxide, other simple oxides ofA-site and B-site metals, and other simple oxides of one or more A-siteor B-site metals.

The invention further provides a method of making an integrated circuitmemory device, the method comprising the steps of: depositing anelectrode layer on the substrate; with the substrate in a depositionchamber, depositing a first interface buffer layer on the substrate, theinterface buffer layer selected from the group consisting of simpleoxides, not including bismuth, of an A-site or a B-site metal; andwithout removing the substrate from the deposition chamber, switching ona superlattice generator metal source supply to deposit a thin filmlayered superlattice material layer including the superlattice generatormetal adjacent to the thin film layered superlattice material layer.Preferably, the method further includes the step of switching off thesuperlattice generator metal source supply to deposit a second interfacebuffer layer on the thin film layered superlattice material layer, theinterface buffer layer selected from the group consisting of simpleoxides, not including bismuth, of an A-site or a B-site metal; anddepositing an electrode layer adjacent the interface buffer layer.

In addition, the invention provides a method of making an integratedcircuit memory device, the method comprising the steps of: depositing afirst electrode layer on a substrate; depositing a first interfacebuffer layer on the substrate, the first interface buffer layer selectedfrom the group consisting of strontium tantalate, bismuth tantalate,strontium niobium tantalate, strontium bismuth tantalate niobate,titanium oxide, and tantalum pentoxide, other simple oxides of A-siteand B-site metals, and other simple oxides of one or more A-site orB-site metals; baking the integrated circuit device at a soft baketemperature; depositing a thin film layered superlattice material layeradjacent the interface buffer layer, the thin film layered superlatticematerial layer selected from the group consisting of strontium bismuthtantalate, strontium bismuth niobate, strontium bismuth niobiumtantalate, bismuth titanate, and bismuth lanthanum titanate; baking theintegrated circuit device at a soft bake temperature; and annealing oneor more of the layers. Preferably, the method also includes the stepsof: depositing a second interface buffer layer adjacent the thin filmsuperlattice material layer, the second interface buffer layer selectedfrom the group consisting of strontium tantalate, bismuth tantalate,strontium niobium tantalate, strontium bismuth tantalate niobate,titanium oxide, and tantalum pentoxide, other simple oxides of A-siteand B-site metals, and other simple oxides of one or more A-site orB-site metals; baking the integrated circuit device at a soft baketemperature; and depositing a second electrode adjacent the secondinterface buffer layer.

The invention also provides a method of making an integrated circuitmemory device, the method comprising the steps of: depositing a firstelectrode layer on a substrate; depositing a first interface bufferlayer on the substrate, the first interface buffer layer comprisingstrontium bismuth tantalum niobate; depositing a thin film layeredsuperlattice material layer adjacent the interface buffer layer, thethin film layered superlattice material layer comprising strontiumbismuth tantalate or strontium bismuth tantalum niobate having a lesseramount of niobium than said first interface buffer layer; and annealingthe integrated circuit device at a crystallization temperature lowerthan the crystallization temperature of the layered superlatticematerial layer without the first interface buffer layer. Preferably, themethod further includes the steps of: depositing a second interfacebuffer layer adjacent the thin film superlattice material layer, theinterface buffer layer selected from the group consisting of strontiumtantalate, bismuth tantalate, strontium niobium tantalate, strontiumbismuth tantalate niobate, titanium oxide, and tantalum pentoxide, othersimple oxides of A-site and B-site metals, and other simple oxides ofone or more A-site or B-site metals; depositing a second electrode layeradjacent the interface buffer layer; and annealing one or more of thelayers. Preferably, the second interface buffer layer comprisesstrontium bismuth tantalum niobate having a higher concentration ofniobium than the thin film layered superlattice material. Preferably,the strontium bismuth tantalate crystallization temperature ranges from550° C. to 750° C.

The use of the interface buffer layer appears to prevent field screeningby providing a transition from the ferroelectric to the conductor. Itpermits very thin film superlattice material devices with excellentferroelectric properties. Numerous other features, objects andadvantages of the invention will become apparent from the followingdescription when read in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 depicts an integrated circuit memory device according to theinvention with an interface buffer layer atop a thin film layeredsuperlattice material layer and beneath a top electrode;

FIG. 2 depicts an integrated circuit memory device according to theinvention with an interface buffer layer beneath a thin film layeredsuperlattice material layer and above a bottom electrode;

FIG. 3 depicts an integrated circuit memory device according to theinvention with an interface buffer layer beneath and atop a thin filmlayered superlattice material layer;

FIG. 4 is a flow diagram depicting an exemplary method for depositing aninterface buffer layer and a thin film layered superlattice materiallayer according to an embodiment of the invention;

FIG. 5 is a flow diagram depicting the method for depositing aninterface buffer layer and a thin film layered superlattice materiallayer according to a slow bake embodiment of the invention; and

FIG. 6 is a flow diagram depicting the method for depositing aninterface crystallization temperature embodiment of the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

FIG. 1 is a first embodiment of the invention, wherein the interfacebuffer layer 120 is located adjacent to and below the upper metalelectrode 105 of the integrated circuit memory device 100 and adjacentto and above the thin film layered superlattice material layer 115 ofthe integrated circuit memory device 100. The thin film layeredsuperlattice material layer 115 is adjacent to and above the lowerelectrode 145. The lower electrode 145 comprises an adhesion metal layer125 and a metal electrode layer 110. The integrated circuit memorydevice 100 also comprises a substrate 140. The substrate 140 comprisesan insulating layer 130 and a semiconducting wafer 135. Herein, the term“substrate material layer” is in a general sense applied to any layer orcombination of layers providing support for yet another layer. Forexample, the substrate 140 for ferroelectric capacitor 150 isimmediately the insulating layer 130, but also can be broadlyinterpreted to include the semiconducting wafer 135 and the combinationof semiconducting wafer 135 with insulating layer 130. As isconventional in the art, we shall also refer to the device in variousstates of completion as a substrate, which is intended to include all ofthe layers completed up to the point of time in reference.

Terms of orientation, such as “above”, “top”, “upper”, “below”,“bottom”, and “lower” herein mean relative to the wafer 135 in FIGS.1-3. That is, if a second element is “above” a first element, it meansit is farther from the semiconducting wafer 135; and if it is “below”another element, then it is closer to the semiconducting wafer 135 thanthe other element. The long dimension of semiconducting wafer 135defines a plane that is considered to be a “horizontal” plane herein,and directions perpendicular to this plane are considered to be“vertical”.

The term “thin film” herein means a thin film of a thickness appropriateto be used in an integrated circuit. Such thin films are less than 1micron in thickness, and generally are in the range of 2 nanometers (nm)to 500 nm. It is important to distinguish this term from the same term,i.e., “thin film”, as used in essentially macroscopic arts, such asoptics, where “thin film” means a film over 1 micron, and usually from 2to 100 microns. Such macroscopic “thin films” are hundreds to thousandsof times thicker than integrated circuit “thin films”, and are made byentirely different processes that generally produce cracks, pores andother imperfections that would be ruinous to an integrated circuit butare of no consequence in optics and other macroscopic arts.

Ferroelectric capacitor 150 contains a bottom metal electrode layer 110.The bottom metal electrode layer 110 can be any metal or electrodestructure suitable for use in integrated circuits, e.g., aluminum, gold,ruthenium, rhodium, and palladium. Bottom electrode 145 is preferablymade of a combination of a bottom metal electrode layer 110 comprisingplatinum and adhesion metal layer 125 comprising titanium where titaniumfunctions as an adhesion metal to prevent peeling of the platinumcomponent away from the oxide layer. Tantalum, iridium and iridium oxideare also useful as adhesion metals. The titanium or other adhesion metallayer 125 is typically sputtered to a thickness ranging from 10 nm to 20nm. The platinum or bottom metal electrode layer 110 preferably rangesfrom 100 nm to 200 nm thick. The bottom metal electrode layer 110 isformed by conventional atomic sputtering techniques, such as DCmagnetron sputtering or radio frequency sputtering.

A thin film layered superlattice material layer 115 resides atop bottomelectrode 145. Thin film layered superlattice material layer 115 ispreferably a metal oxide having a high dielectric constant andferroelectric properties. Thin film layered superlattice material layer115 is fabricated as described in detail below and is preferably lessthan about 400 nm thick, and most preferably less than about 200 nmthick. Thin film layered superlattice material layer 115 is preferably alayered superlattice material containing bismuth, and is most preferablya mixed layered superlattice material.

The term “perovskite” herein refers to a known class of material havingthe general form ABO₃, where A and B are cations and O is an oxygenanion component. This term is intended to include materials where A andB represent multiple elements; for example, it includes materials of theform A′A″BO₃, AB′B″O₃, and A′A″B′B″O₃, where A′, A″, B′ and B″ aredifferent metal elements. Preferably, A, A′, and A″ are metals selectedfrom the group of metals consisting of Ba, Bi, Sr, Pb, Ca, and La; andB, B′, and B″ are metals selected from the group consisting of Ti, Zr,Ta, Mo, W, and Nb. The terms “A-site” and “B-site” refer to specificpositions in the perovskite oxygen octahedral lattice.

Many layered superlattice materials have a plurality of perovskite-likeoxygen octahedron layers separated by a corresponding number of bismuthoxide layers. Layered superlattice materials are typically ferroelectricmaterials, though not all such materials may exhibit ferroelectricbehavior at room temperature. These materials normally have highdielectric constants, and are useful in high dielectric constantcapacitors, whether or not they are ferroelectric. The terms “A-site”and “B-site”, when used in connection with the layered superlatticematerials of the invention, refer to specific locations within theoxygen octahedral layers.

All types of layered superlattice materials may be generally summarizedunder the average empirical formula:

A1_(w1) ^(+a1)A2_(w2) ^(+a2) . . . Aj_(wj) ^(+aj)S1_(x1) ^(+s1)S2_(x2)^(+s2) . . . Sk_(xk) ^(+xk)B1_(y1) ^(+b1)B2_(y2) ^(+b2) . . Bl_(yl)^(+bl)Q_(z) ⁻².  (1)

Note that Formula (1) refers to a stoichiometrically balanced list ofsuperlattice-forming moieties. Formula (1) does not represent a unitcell construction, nor does it attempt to allocate ingredients to therespective layers. In Formula (1), A1, A2 . . . Aj represent A-siteelements in a perovskite-like octahedral structure, which includeselements such as strontium, calcium, barium, bismuth, lead, and mixturesthereof, as well as other metals of similar ionic radius. S1, S2 . . .Sk represent superlattice generator elements, which preferably includeonly bismuth, but can also include trivalent materials such as yttrium,scandium, lanthanum, antimony, chromium, and thallium. B1, B2 . . . Blrepresent B-site elements in the perovskite-like structure, which may beelements such as titanium, tantalum, hafnium, tungsten, niobium,vanadium, zirconium, and other elements; and Q represents an anion,which preferably is oxygen but may also be other elements, such asfluorine, chlorine and hybrids of these elements, such as theoxyfluorides, the oxychlorides, etc. The superscripts in Formula (1)indicate the valences of the respective elements. The subscriptsindicate the number of atoms of a particular element in the empiricalformula compound. In terms of the unit cell, the subscripts indicate anumber of atoms of the element, on the average, in the unit cell. Thesubscripts can be integer or fractional. That is, Formula (1) includesthe cases where the unit cell may vary throughout the material, e.g., inSr_(0.75)Ba_(0.25)Bi₂Ta₂O₉ where, on the average, 75% of the time Sr isthe A-site atom and 25% of the time Ba is the A-site atom. If there isonly one A-site element in the compound, then it is represented by the“A1” element, and w2 . . . wj all equal zero. If there is only oneB-site element in the compound, then it is represented by the “B1”element, and y2 . . . yl all equal zero, and similarly for thesuperlattice generator elements. The usual case is that there is oneA-site element, one superlattice generator element, and one or twoB-site elements, although Formula (1) is written in the more generalform because the invention is intended to include the cases where eitherof the A- and B-sites and the superlattice generator can have multipleelements. The value of z is found from the equation:

(a1w1+a2w2 . . . +ajwj)+(s1x1+s2x2 . . . +skxk)+(b1y1+b2y2 . . .+blyl)=2z.  (2)

The layered superlattice materials by definition do not include everymaterial that can be fit into Formula (1), but only those ingredientswhich spontaneously form themselves into a layer of distinct crystallinelayers during crystallization. This spontaneous crystallization istypically assisted by thermally treating or annealing the mixture ofingredients. The enhanced temperature facilitates ordering of thesuperlattice-forming moieties into thermodynamically favored structures,such as perovskite-like octahedrons.

The term “superlattice generator elements” as applied to S1, S2 . . .Sk, refers to the fact that these metals are particularly stable in theform of a concentrated metal oxide layer interposed between twoperovskite-like layers, as opposed to a uniform random distribution ofsuperlattice generator metals throughout the mixed layered superlatticematerial. In particular, bismuth has an ionic radius that permits it tofunction as either an A-site material or a superlattice generator; butbismuth, if present in amounts less than a threshold stoichiometricproportion, will spontaneously concentrate as a non-perovskite-likebismuth oxide layer.

The term “layered thin film superlattice material” herein also includesdoped layered superlattice materials. That is, any of the materialincluded in Formula (1) may be doped with a variety of materials, suchas silicon, germanium, uranium, zirconium, tin, chromium, dysprosium, orhafnium.

Formula (1) at least includes all three of the Smolenskii-typeferroelectric layered superlattice materials; namely, those having therespective empirical formulae:

A_(m−1)S₂B_(m)O_(3m+3);  (3)

A_(m+1)B_(m)O_(3m+1);  (4)

and

A_(m)B_(m)O_(3m+2),  (5)

wherein A is an A-site metal in the perovskite-like superlattice, B is aB-site metal in the perovskite-like superlattice, S is a trivalentsuperlattice-generator metal such as bismuth or thallium, and m is anumber sufficient to balance the overall formula charge. Where m is afractional number, the overall average empirical formula provides for aplurality of different or mixed perovskite-like layers wherein therespective layers have different thicknesses of perovskite-like oxygenoctahedrons.

In a first embodiment of the present invention, an upper interfacebuffer layer 120 is formed atop thin film layered superlattice materiallayer 115. Upper interface buffer layer 120 is used to compensate pointcharge defects in the upper surface of thin film layered superlatticematerial layer 115 and also results in a smoother interface with theelectrode 105. In the preferred applications, the upper interface bufferlayer 120 is preferably an oxide of an A-site or B-site metal. The oxidecan be one including a plurality of metals or one including only onemetal. The oxide does not include bismuth, but can include both anA-site and a B-site metal. The upper interface buffer layer can alsopreferably be a second layered superlattice material different from thefirst layered superlattice material 115 but including at least oneA-site or B-site element in common with the layered superlatticematerial 115. “Different” within the above context means that either thechemical elements or the stoichiometry with respect to the A-site andB-site elements is different in the second layered superlattice materialas compared to the first layered superlattice material. “Different” doesnot include the situation in which the amount of bismuth or otherlayered superlattice generator material is the only difference.

Most preferably, the interface buffer layer material is selected fromthe group consisting of strontium tantalate, bismuth tantalate,strontium niobium tantalate, strontium bismuth tantalate niobate,titanium oxide, and tantalum pentoxide, other simple oxides of A-siteand B-site metals, and other simple oxides of one or more A-site orB-site metals. Here, “simple oxide” means an oxide having a crystalstructure that includes only a single unit cell that repeats. That is, a“simple oxide” does not include any of the layered materials. Thepreferred thickness of the interface buffer layer is at least 3 nm, andpreferably ranges from 3 nm to 30 nm, with the most preferred thicknessranging from 5 nm to 20 nm. The best results are obtained withthicknesses of 10 nm. Interface buffer layers thicker than about 30 nmmay result in a parasitic capacitance due to the dielectric behavior ofthe interface buffer material with associated screening of the appliedfield in a deleterious manner similar to screening of the field bycharge defects.

In some circumstances, upper interface buffer layer 120 is thin enoughto diffuse into the thin film layered superlattice material layer 115.Similarly, thin film layered superlattice material layer 115 may diffuseinto upper interface buffer layer 120 or the layers may interdiffuse.

A top electrode 105 is typically about 100 nm to 200 nm thick, and isusually made of the same metal or electrode structure as the bottomelectrode 145, except titanium or other adhesion metal is normally notneeded. Top electrode 105 may also have a different structure or be madeof a different metal than bottom electrode 145.

As is known in the art, the integrated circuit memory device 100 mayinclude other conventional layers, such as diffusion barrier layers.Many other materials may be used for any of the layers discussed above,such as silicon nitride for insulating layer 130; gallium arsenide,indium antimonide, magnesium oxide, strontium titanate, sapphire orquartz for semiconducting wafer 135; and many other adhesion layers,barrier layers, and electrode materials. Bottom electrode 145 may beeliminated, in which case the integrated circuit memory device 100 is nolonger a ferroelectric capacitor 150, and becomes useful as a 1T ortransistor gate in what is known as ametal-ferroelectric-insulator-semiconductor cell. Further, it should beunderstood that FIG. 1 is not meant to be an actual cross-sectional viewof any particular portion of an actual electronic device, but is merelyan idealized representation which is employed to more clearly and fullydepict the structure and process of the invention than would otherwisebe possible. For example, the relative thicknesses of the individuallayers are not depicted proportionately, since otherwise some layers,such as the semiconducting wafer 135 or insulating layer 125, would beso thick as to make the drawing unwieldy.

A second embodiment of the present invention, second integrated circuitmemory device 200, is shown in FIG. 2. In FIG. 2, like numbering ofidentical components has been retained with respect to FIG. 1.Integrated circuit memory device 200 contains a ferroelectric capacitor250 that differs from ferroelectric capacitor 150 by the addition of alower interface buffer layer 205 interposed between thin film layeredsuperlattice material layer 115 and bottom electrode 145. Upperinterface buffer layer 120 is absent in the FIG. 2 embodiment, but upperinterface buffer layer 120 could also be included in place between topelectrode 105 and thin film layered superlattice material layer 115.Lower interface buffer layer 205 is preferably made of one of thematerials discussed above with respect to upper interface buffer layer120.

FIG. 3 depicts a third embodiment of an integrated circuit memory device300 according to the invention. In FIG. 3, like numbering of identicalcomponents has been retained with respect to FIGS. 1 and 2. Integratedcircuit memory device 300 contains a ferroelectric capacitor 350 thatdiffers from ferroelectric capacitors 150 and 250 in that ferroelectriccapacitor 350 incorporates both an upper interface buffer layer 120 anda lower interface buffer layer 205. Upper interface buffer layer 120 islocated adjacent and below the upper electrode 105 and adjacent andabove the thin film layered superlattice material layer 115. Lowerinterface buffer layer 205 is located adjacent and above the bottomelectrode 145 and adjacent and below the thin film layered superlatticematerial layer 115.

The interface buffer layers 120 and 205 may be produced from sputteredmetal that is oxidized in an anneal, the oxidized metal may itself besputtered, or the layers may be produced from spin-on liquid precursors;such as sol-gels (metal alkoxides), metal carboxylates or metalalkoxycarboxylate solutions. Misted liquid deposition or chemical vapordeposition may also be used.

FIG. 4 depicts a first method of making integrated circuit memory device300. In FIGS. 4-6, the steps shown in dashed boxes are optional. In thisfirst method, conventional methods that are well known in the art areapplied to provide a semiconducting wafer 135. Next, an insulating layer130 is formed, preferably by conventional methods, such as thermaloxidation of semiconducting wafer 135 or spin-on glass deposition. Next,bottom metal electrode 145 is formed in step 405, preferably byconventional sputtering processes. Once the bottom metal electrode 145is deposited 405 then, if a lower buffer interface layer is desired, asource of A-site and B-site metals of a selected thin film layeredsuperlattice material layer, such as strontium bismuth tantalate, isused to deposit 410 an oxide buffer layer 205 including the A-site andB-site materials. For example, if the layered superlattice material isstrontium bismuth tantalate, the A and B oxide will be strontiumtantalate. Preferably, the layered thin film superlattice material isselected from the group consisting of strontium bismuth tantalate,strontium bismuth niobate, strontium bismuth niobium tantalate, andbismuth lanthanum titanate. Thus, preferably the A and B oxide isselected from the group consisting of strontium tantalate, strontiumniobate, strontium niobium tantalate, and lanthanum doped titaniumoxide. The A and B oxide is preferably deposited 405 by sputtering ormetalorganic chemical vapor deposition. Then, in step 415, a source ofbismuth is switched on, thereby adding a source of bismuth to the sourceof A and B metals and a thin film 115 of the selected layeredsuperlattice material is formed. Here, “switching on” includes turning avalve or switch to add fluid including the bismuth, directing asputtering beam into a bismuth target, or any other process by which abismuth source can be added to the A and B metal source. Once the thinfilm layered superlattice material layer 115 is formed, then the bismuthsource supply is turned off or removed in step 420 and an upperinterface buffer layer 120 of the A- and B-site, such as the oxidestrontium tantalate, is deposited 425 adjacent to and on top of the thinfilm layered superlattice material layer 115, if the upper interfacebuffer layer is desired. Preferably, the upper interface buffer layer120 is selected from the group consisting of strontium tantalate,strontium niobate, strontium tantalum niobate, and lanthanum dopedtitanium oxide. The wafer including the buffer layer 205, the thin filmlayered superlattice material layer 115, and the buffer layer 120 issubjected to an optional elevated temperature first anneal 427 tooptimize the ferroelectric performance in the thin film layeredsuperlattice material layer 115. These temperatures typically range from600° C. to 850° C. Next, a top metal electrode 105 is formed in step430, preferably by a conventional sputtering process. Then, againoptionally, the integrated circuit memory device 100 is annealed 435 ina furnace at approximately 550° C. to 700° C. The integrated circuit isthen completed in step 440 to include the buffer layers 205 and 120 andthe layered superlattice material 115 as active layers in the integratedcircuit device.

The method depicted in FIG. 4 may also be used to make integratedcircuit memory device 100 by elimination of step 410 or to form memorydevice 200 by elimination of step 425.

A variation of the method depicted in FIG. 4 may also be used to make anintegrated circuit memory device 300 in which the buffer layer is asimple oxide of either an A-site material or a B-site material. In thismethod, conventional methods that are well known in the art are appliedto provide a semiconducting wafer 135. Next, an insulating layer 130 isformed, preferably by conventional methods, such as thermal oxidation ofsemiconducting wafer 135 or spin-on glass deposition. Next, bottom metalelectrode 145 is formed in step 405, preferably by conventionalsputtering processes. Once the bottom metal electrode 145 is deposited405, then a source of either an A-site or a B-site metal of a selectedthin film layered superlattice material layer, such as strontium bismuthtantalate, is used to deposit 410 an oxide buffer layer 205 includingthe A-site or B-site material. For example, if the layered superlatticematerial is strontium bismuth tantalate, the A or B oxide will be astrontium oxide or a tantalum oxide, such as tantalum pentoxide.Preferably, the layered thin film superlattice material is selected fromthe group consisting of strontium bismuth tantalate, strontium bismuthniobate, strontium bismuth niobium tantalate, bismuth titanate, andbismuth lanthanum titanate. Thus, preferably the A or B oxide isselected from the group consisting of a strontium oxide, a niobiumoxide, a titanium oxide, or a tantalum oxide. The A or B oxide ispreferably deposited 405 by sputtering or metalorganic chemical vapordeposition. It also may be doped with an element of the layeredsuperlattice material 15. Then, in step 415, a source of bismuth and theother B- or A-site material is turned on or added to the source of A orB oxide and a thin film 115 of the selected layered superlatticematerial is formed. Once the thin film layered superlattice materiallayer 115 is formed, then the supplies of bismuth and the other B or Aoxide is turned off or removed in step 420 and an upper interface bufferlayer 120 of the A- or B-site, such as a strontium oxide or a tantalumoxide, is deposited 425 adjacent to and on top of the thin film layeredsuperlattice material layer 115. Preferably, the upper interface bufferlayer 120 is selected from the group consisting of a strontium oxide, aniobium oxide or a tantalum oxide. The wafer including the buffer layer205, the thin film layered superlattice material layer 115, and thebuffer layer 120 is subjected to an elevated temperature first anneal427 to optimize the ferroelectric performance in the thin film layeredsuperlattice material layer 115. These temperatures typically range from600° C. to 850° C. Next, a top metal electrode 105 is formed, preferablyby a conventional sputtering process. Then the integrated circuit memorydevice 100 is annealed 435 in a furnace at approximately 550° C. to 700°C. The integrated circuit is then completed in step 440 to include thebuffer layers 205 and 120 and the layered superlattice material 115 asactive layers in the integrated circuit device. Again, the steps offorming the lower and upper interface buffer layers are performed onlyif each layer is desired. As before, the anneal steps are optional.

The method just described may also be used to make integrated circuitmemory device 100 by elimination of step 410 or to form memory device200 by elimination of step 425.

FIG. 5 is an embodiment of a soft bake method whereby soft bakingtemperatures are utilized between deposition steps to produce anintegrated circuit memory device. In this method, conventional methodsthat are well known in the art are preferably applied to provide asemiconducting wafer 135. Preferably, conventional methods, such asthermal oxidation of semiconducting wafer 135 or spin-on glassdeposition, are used to form insulating layer 130. Conventionalsputtering processes are preferably used to deposit 505 a bottom metalelectrode 145. A lower interface buffer layer 205 is deposited 510 ontop of the bottom metal electrode 145, preferably by misted depositionof spin-on techniques or other suitable method of liquid deposition.Preferably, the lower interface buffer layer 205 is selected from thegroup consisting of: 1) simple oxides, not including bismuth, of anA-site or a B-site metal; and 2) second layered superlattice materialsdifferent from the first layered superlattice material and containing atleast one A-site or B-site metal that is the same as an A-site or B-sitemetal in the first layered superlattice material. Most preferably, theinterface buffer layer is selected from the group consisting ofstrontium tantalate, bismuth tantalate, strontium niobium tantalate,strontium bismuth tantalate niobate, titanium oxide, and tantalumpentoxide, other simple oxides of A-site and B-site metals, and othersimple oxides of one or more A-site or B-site metals. The buffer layeris formed 505 by coating the substrate with a liquid coating in themisted deposition or spin-on process, then the substrate is soft baked515, preferably at an approximate temperature of 150° C. to 200° C. Thena thin film layered superlattice material layer 115 is deposited 520 ontop of the lower interface buffer layer 205 by misted liquid deposition,by spin-on liquid deposition, or by any other suitable means of liquiddeposition. Preferably, the layered thin film superlattice material isselected from the group consisting of strontium bismuth tantalate,strontium bismuth niobate, strontium bismuth niobium tantalate, bismuthtitanate, and bismuth lanthanum titanate. Then the substrate is softbaked 525, preferably at an approximate temperature of 150° C. to 200°C. An upper interface buffer layer 120 is deposited 530 on top of thethin film layered superlattice material layer 115, preferably by amisted deposition, spin-on deposition or other liquid deposition processfollowed by a soft bake 535, preferably at an approximate temperature of150° C to 200° C. Preferably, the upper interface buffer layer 120 isselected from the group consisting of: 1) oxides of an A-site or aB-site metal; and 2) a second layered superlattice material 120, 205different from the first layered superlattice material 115 andcontaining at least one A-site or B-site metal that is the same as anA-site or B-site metal in the first layered superlattice material 115.Most preferably, the interface buffer layer is selected from the groupconsisting of strontium tantalate, bismuth tantalate, strontium niobiumtantalate, strontium bismuth tantalate niobate, titanium oxide, andtantalum pentoxide, other simple oxides of A-site and B-site metals, andother simple oxides of one or more A-site or B-site metals. The bufferlayers 120 and 205 and the layered superlattice material layer 115 arethen annealed, preferably at a temperature range from 600° C. to 850° C.The top metal electrode 105 is then deposited 540 on top of the thinfilm layered superlattice material layer 115 and the integrated circuitmemory device 100 is annealed 545 in a furnace at approximately 550° C.to 700° C. The integrated circuit is then completed in step 550 toinclude the buffer layers 205 and 120 and the layered superlatticematerial 115 as active layers in the integrated circuit device. Themethod just described may also be used to make integrated circuit memorydevice 100 by elimination of steps 510 and 515 or to form memory device200 by elimination of steps 530 and 535.

As shown in FIG. 6, a variation of the method of FIG. 4 may be used toform an integrated circuit 100, 200, or 300 in which the buffer layer orlayers is a layered superlattice material different than the layeredsuperlattice material 115 but sharing at least one A-site or B-sitematerial with the layered superlattice material 115. As indicated above,the steps shown in boxes with dashed outlines in FIG. 6 are optional.The method of FIG. 6 is the same as the first method described above inconnection with FIG. 4, except that instead of just the A and B sources,a source of bismuth is also used. For example, in step 605, an electrodelayer 125 is deposited as discussed above. Then, for example, if a lowerbuffer layer is desired, in step 610, a strontium source, a tantalumsource, and a niobium source may be used in combination with a bismuthsource to form a strontium bismuth tantalum niobate layer 205. Then, ina step 615 analogous to step 415, the niobium source may be reduced,removed, turned down or turned off to form, in step 620, a layer 115,with reduced niobium content. This layer may be strontium bismuthtantalate or strontium bismuth tantalum niobate in which the amount ofniobium is less than in the buffer layer. Then, if an upper buffer layeris desired, in a step 625 analogous to step 420, the niobium source isturned up, turned back on or added to form a strontium niobium bismuthtantalate layer 120 in step 630. In this layer 120, the concentration ofniobium is higher than the concentration of niobium in the layeredsuperlattice material layer 115. The wafer including the buffer layer205, the thin film layered superlattice material layer 115, and thebuffer layer 120 is then optionally subjected to an elevated temperaturefirst anneal 635 to optimize the ferroelectric performance in the thinfilm layered superlattice material layer 115. These temperaturestypically range from 600° C. to 850° C. Next, a top metal electrode 105is formed in step 640, preferably by a conventional sputtering process.Then, optionally, the integrated circuit memory device 100 is annealed645 in a furnace at approximately 550° C. to 700° C. The integratedcircuit is then completed in step 650 to include the buffer layers 205and 120 and the layered superlattice material 115 as active layers inthe integrated circuit device.

In the process just described, the layered superlattice material 115 ispreferably strontium bismuth tantalate or strontium bismuth tantalumniobate and the buffer layer 120 and/or 205 is preferably strontiumtantalum bismuth niobate having a higher concentration of niobium thanthe layer 115. This process provides a lower temperature first annealstep 635. That is, presumably because strontium bismuth niobate has alower crystallization temperature than strontium bismuth tantalate, andbecause the more niobium that is added to strontium bismuth tantalumniobate the lower the temperature at which a layered superlatticematerial will form, the use of buffer layers of strontium bismuthtantalum niobate with higher concentrations of niobium than the layeredsuperlattice material 115 has been found to lower the first annealtemperature by about 50° C. Such a lowering of the first annealtemperature increases the yield of good memories by about 10% because ofless degradation of the MOSFET devices in the circuit.

Similar to the process shown in FIG. 6, other second layeredsuperlattice materials may be used as buffer layers 120 and/or 205 andother first layered superlattice materials may be used as layeredsuperlattice material 115, with the only requirement being that thefirst and second layered superlattice materials are different layeredsuperlattice materials.

All of the components of device 100, device 200, and device 300, exceptinterface buffer layers 120 and 205 and layered superlattice material115, are preferably made according to known methods. These conventionalmethods are well known in the art and include, for example, thermaloxidation of semiconducting wafer 135 to yield insulating layer 130 orspin-on glass deposition of layer 130 with a substantially similarresult. Conventional sputtering processes are preferably used to depositbottom electrode 145 and top electrode 105. Conventional resist etchingtechniques are preferably used to pattern the devices for theirinclusion in integrated circuits. These processes are not critical tothe invention. For example, substrate 135 is alternatively a stackedintegrated circuit structure resulting from conventional CMOS processes.

There has been described a method for fabricating an integrated circuithaving an interface buffer layer. It should be understood that theparticular embodiments shown in the drawings and described within thisspecification are for purposes of example and should not be construed tolimit the invention which will be described in the claims below. Forexample, the invention contemplates that additional process steps andlayers may be included. For example, barrier layers and/or adhesionlayers may be included in electrodes or buffer layers. In some cases,the process steps may take place in a different order. Similarly, theinvention may be applied to any ferroelectric integrated circuit devicehaving an electrode and a ferroelectric layer, such as a ferroelectricFET or other devices.

What is claimed is:
 1. A method of making an integrated circuit memorydevice, said method comprising the steps of: depositing a firstelectrode layer on a substrate; depositing a first interface bufferlayer on said substrate, said first interface buffer layer selected fromthe group consisting of: simple oxides of an A-site or a B-site metal,said simple oxide of an A-site or a B-site metal not including bismuth;and first layered superlattice materials, said simple oxide and saidfirst layered supperlattice materials not including superlatticegenerator enriched materials; and depositing a thin film second layeredsuperlattice material layer adjacent to said thin film interface bufferlayer, said thin film second layered superlattice material layer being adifferent material than said first interface buffer layer material andcontaining at least one A-site or B-site metal that is the same as anA-site or B-site metal in said first interface buffer layer material. 2.A method as in claim 1 wherein said first interface buffer layer isselected from the group consisting of: strontium tantalate, bismuthtantalate, strontium niobium tantalate, strontium bismuth tantalateniobate, titanium oxide and tantalum pentoxide, other simple oxides ofA-site and B-site metals, and other simple oxides of one or more A-siteor B-site metals.
 3. A method as in claim 1 and further including thesteps of: depositing a second interface buffer layer on said thin filmlayered superlattice material layer, said second interface buffer layerselected from the group consisting of, simple oxides, not includingbismuth, of an A-site or a B-site metal; and layered superlatticematerials; said second interface buffer layer comprising a differentmaterial than said thin film second layered superlattice material layer;and depositing a second electrode layer adjacent said second interfacebuffer layer.
 4. A method as in claim 1 wherein said second interfacebuffer layer is selected from the group consisting of: strontiumtantalate, bismuth tantalate, strontium niobium tantalate, strontiumbismuth tantalate niobate, titanium oxide and tantalum pentoxide, othersimple oxides of A-site and B-site metals, and other simple oxides ofone or more A-site or B-site metals.
 5. A method as in claim 1 andfurther including the step of annealing one or more of said layers.
 6. Amethod as in claim 1 wherein said interface buffer layer has a thicknessranging from 3 nm to 30 nm.
 7. A method as in claim 6 wherein saidinterface buffer layer has a thickness ranging from 5 nm to 20 nm.
 8. Amethod of making an integrated circuit memory device, said methodcomprising the steps of: depositing an electrode layer on saidsubstrate; with said substrate in a deposition chamber, depositing afirst interface buffer layer on said substrate, said interface bufferlayer selected from the group consisting of simple oxides, of an A-siteor a B-site metal, said simple oxide of an A-site or a B-site metal notincluding bismuth and not including superlattice generator enrichedmaterials; and without removing said substrate from said depositionchamber, switching on a superlattice generator metal source supply todeposit a thin film layered superlattice material layer including saidsuperlattice generator metal adjacent to said thin film layeredsuperlattice material layer.
 9. A method as in claim 8 and furtherincluding the step of switching off said superlattice generator metalsource supply to deposit a second interface buffer layer on said thinfilm layered superlattice material layer, said interface buffer layerselected from the group consisting of simple oxides, of an A-site or aB-site metal, said simple oxide of an A-site or a B-site metal notincluding bismuth; and depositing an electrode layer adjacent saidinterface buffer layer.
 10. A method as in claim 8 wherein said firstinterface buffer layer is selected from the group consisting of:strontium tantalate, bismuth tantalate, strontium niobium tantalate,strontium bismuth tantalate niobate, titanium oxide, and tantalumpentoxide, other simple oxides of A-site and B-site metals, and othersimple oxides of one or more A-site or B-site metals.
 11. A method as inclaim 8 and further including the step of annealing one or more of saidlayers.
 12. A method as in claim 8 wherein said step of switching on asuperlattice generator metal source supply includes switching on asupply of bismuth.
 13. A method as in claim 12 wherein said step ofdepositing said thin film layered superlattice material layer includesdepositing a thin film layered superlattice material layer selected fromthe group consisting of strontium bismuth tantalate, strontium bismuthniobate, strontium bismuth niobium tantalate, bismuth titanate, andbismuth lanthanum titanate.
 14. A method as in claim 8 wherein said stepof annealing comprises diffusing said interface buffer layer into saidthin film layered superlattice material layer.
 15. A method as in claim8 wherein said interface buffer layer is deposited on said thin filmlayered superlattice material layer and said electrode is thereafterdeposited on said interface buffer layer.
 16. A method of making anintegrated circuit memory device, said method comprising the steps of:depositing a first electrode layer on a substrate; depositing a firstinterface buffer layer on said substrate, said first interface bufferlayer selected from the group consisting of strontium tantalate,strontium niobium tantalate, strontium bismuth tantalate niobate,titanium oxide, and tantalum pentoxide, other simple oxides of A-siteand B-site metals, and other simple oxides of one or more A-site orB-site metals, said oxides not including bismuth and not includingsuperlattice generator enriched materials; baking said integratedcircuit device at a soft bake temperature; depositing a thin filmlayered superlattice material layer adjacent said interface bufferlayer, said thin film layered superlattice material layer selected fromthe group consisting of strontium bismuth tantalate, strontium bismuthniobate, strontium bismuth niobium tantalate, bismuth titanate, andbismuth lanthanum titanate; baking said integrated circuit device at asoft bake temperature; and annealing one or more of said layers.
 17. Amethod as in claim 16 wherein said step of depositing a superlatticematerial includes depositing bismuth.
 18. A method as in claim 16wherein said step of annealing comprises diffusing said interface bufferlayer into said thin film layered superlattice material layer.
 19. Amethod as in claim 16 wherein said interface buffer layer is depositedon said electrode and said thin film layered superlattice material layeris thereafter deposited on said interface buffer layer.
 20. A method asin claim 16 wherein said interface buffer layer is deposited on saidthin film layered superlattice material layer and said electrode isthereafter deposited on said interface buffer layer.
 21. A method as inclaim 16 and further including the steps of: depositing a secondinterface buffer layer adjacent said thin film superlattice materiallayer, said second interface buffer layer selected from the groupconsisting of strontium tantalate, bismuth tantelate, strontium niobiumtantalate, strontium bismuth tantalate niobate, titanium oxide, andtantalum pentoxide, other simple oxides of A-site and B-site metals, andother simple oxides of one or more A-site or B-site metals; baking saidintegrated circuit device at a soft bake temperature; and depositing asecond electrode adjacent said second interface buffer layer.
 22. Amethod of making an integrated circuit memory device, said methodcomprising the steps of: depositing a first electrode layer on asubstrate; depositing a first interface buffer layer on said substrate,said first interface buffer layer comprising strontium bismuth tantalumniobate; depositing a thin film layered superlattice material layeradjacent said interface buffer layer, said thin film layeredsuperlattice material layer comprising strontium bismuth tantalate orstrontium bismuth tantalum niobate having a lesser amount of niobiumthan said first interface buffer layer; and annealing said integratedcircuit device at a crystallization temperature lower than thecrystallization temperature of said thin film layered superlatticematerial layer without said first interface buffer layer.
 23. A methodas in claim 22 wherein said step of annealing comprises diffusing saidinterface buffer layer into said thin film layered superlattice materiallayer.
 24. A method as in claim 22 wherein said interface buffer layeris deposited on said electrode and said thin film layered superlatticematerial layer is thereafter deposited on said interface buffer layer.25. A method as in claim 22 wherein said interface buffer layer isdeposited on said thin film layered superlattice material layer and saidelectrode is thereafter deposited on said interface buffer layer.
 26. Amethod as in claim 22 and further including the steps of: depositing asecond interface buffer layer adjacent said thin film layeredsuperlattice material layer, said interface buffer layer selected fromthe group consisting of strontium tantalate, bismuth tantalate,strontium niobium tantalate, strontium bismuth tantalate niobate,titanium oxide, and tantalum pentoxide, other simple oxides of A-siteand B-site metals, and other simple oxides of one or more A-site orB-site metals; depositing a second electrode layer adjacent saidinterface buffer layer; and annealing one or more of said layers.
 27. Amethod as in claim 26 wherein said second interface buffer layercomprises strontium bismuth tantalum niobate having a higherconcentration of niobium than said thin film layered superlatticematerial.
 28. A method as in claim 22 wherein said strontium bismuthtantalate crystallization temperature ranges from 550° C. to 750° C.